r07ds0794ej0300 rev.3.00 page 1 of 9 may 23, 2013 preliminary datasheet RJH60D5BDPQ-E0 600v - 37a - igbt application: inverter features ? short circuit withstand time (5 s typ.) ? low collector to emitter saturation voltage v ce(sat) = 1.6 v typ. (at i c = 37 a, v ge = 15 v, ta = 25c) ? built in fast recovery diode (25 ns typ.) in one package ? trench gate and thin wafer technology ? high speed switching t f = 50 ns typ. (at v cc = 300 v, v ge = 15 v, i c = 37 a, rg = 5 , ta = 25c, inductive load) outline 1. gate 2. collecto r 3. emitter 4. collecto r c g e 1 2 3 4 renesas package code: prss0003ze-a (package name: to-247) absolute maximum ratings (ta = 25c) item symbol ratings unit collector to emitter voltage / diode reverse voltage v ces / v r 600 v gate to emitter voltage v ges 30 v collector current tc = 25c i c 75 a tc = 100c i c 37 a collector peak current ic(peak) note1 150 a collector to emitter diode forward current i df 30 a collector to emitter diode forward peak current i df (peak) note1 120 a collector dissipation p c note2 200 w junction to case the rmal resistance (igbt) j-c note2 0.63 c/ w junction to case thermal resistance (diode) j-cd note2 1.1 c/ w junction temperature tj 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. value at tc = 25 c r07ds0794ej0300 rev.3.00 may 23, 2013
RJH60D5BDPQ-E0 preliminary r07ds0794ej0300 rev.3.00 page 2 of 9 may 23, 2013 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions collector to emitter breakdown voltage v br(ces) 600 ? ? v i c =10 a, v ge = 0 zero gate voltage collector current / diode reverse current i ces / i r ? ? 5 a v ce = 600 v, v ge = 0 gate to emitter leak current i ges ? ? 1 a v ge = 30 v, v ce = 0 gate to emitter cutoff voltage v ge(off) 4.0 ? 6.0 v v ce = 10 v, i c = 1 ma collector to emitter saturation voltage v ce(sat) ? 1.6 2.2 v i c = 37 a, v ge = 15 v note3 v ce(sat) ? 2.0 ? v i c =75 a, v ge = 15 v note3 input capacitance cies ? 1900 ? pf v ce = 25 v v ge = 0 f = 1 mhz output capacitance coes ? 120 ? pf reveres transfer capacitance cres ? 60 ? pf total gate charge qg ? 78 ? nc v ge = 15 v v ce = 300 v i c = 37 a gate to emitter charge qge ? 12 ? nc gate to collector charge qgc ? 36 ? nc turn-on delay time t d(on) ? 50 ? ns v cc = 300 v v ge = 15 v i c = 37 a rg = 5 inductive load rise time t r ? 40 ? ns turn-off delay time t d(off) ? 130 ? ns fall time t f ? 50 ? ns turn-on energy e on ? 0.40 ? mj turn-off energy e off ? 0.81 ? mj total switching energy e total ? 1.21 ? mj short circuit withstand time t sc 3.0 5.0 ? s v cc 360 v, v ge = 15 v frd forward voltage v f ? 2.5 3.0 v i f = 30 a note3 frd reverse recovery time t rr ? 25 ? ns i f = 30 a di f /dt = 100 a/ s frd reverse recovery charge q rr ? 26 ? nc frd peak reverse recovery current i rr ? 1.3 ? a notes: 3. pulse test.
RJH60D5BDPQ-E0 preliminary r07ds0794ej0300 rev.3.00 page 3 of 9 may 23, 2013 main characteristics typical output characteristics 150 125 100 75 50 25 12345 collector current i c (a) 0 0 collector to emitter voltage v ce (v) 150 125 100 75 50 25 0 tc = 2 5 c pulse test v ge = 8 v 15 v 18 v 10 v 12 v collector current i c (a) collector to emitter voltage v ce (v) maximum safe operation area typical output characteristics 12345 collector current i c (a) 0 collector to emitter voltage v ce (v) v ge = 8 v 15 v 10 v collector current i c (a) case temperature tc (c) maximum dc collector current vs. case temperature 0 25 50 100 75 125 150 175 0 25 50 100 75 125 150 175 collector current i c (a) collector to emitter voltage v ce (v) turn-off soa collector dissipation pc (w) case temperature tc (c) collector dissipation vs. case temperature 250 200 150 100 50 0 100 80 60 40 20 0 18 v 12 v 1000 100 1 10 0.1 1 100 10 1000 tc = 25 c single pulse 100 s pw = 10 s tc = 150 c pulse test 0 200 400 600 800 200 150 100 50 0
RJH60D5BDPQ-E0 preliminary r07ds0794ej0300 rev.3.00 page 4 of 9 may 23, 2013 gate to emitter voltage v ge (v) collector to emitter satularion voltage vs. gate to emitter voltage (typical) collector to emitter satularion voltage vs. gate to emitter voltage (typical) collector to emitter satularion voltage v ce(sat) (v) collector to emitter satularion voltage v ce(sat) (v) gate to emitter voltage v ge (v) collector current i c (a) gate to emitter voltage v ge (v) transfer characteristics (typical) 0 04812 20 16 v ce = 10 v pulse test tc = 2 5 c 150 c 150 125 100 75 50 25 collector to emitter saturation voltage vs. case temparature (typical) collector to emitter saturation voltage v ce(sat) (v) case temparature tc ( c) ? 25 0 25 75 125 50 100 150 2.8 1.6 1.2 2.0 2.4 37 a 18.5 a i c = 75 a v ge = 15 v pulse test 10 8 6 4 2 0 gate to emitter cutoff voltage vs. case temparature (typical) ? 25 0 25 75 125 50 100 150 gate to emitter cutoff voltage v ge(off) (v) v ce = 10 v pulse test case temparature tc ( c) 1 ma i c = 10 ma frequency characteristics (typical) collector current i c(rsm) (a) frequency f (khz) 5 4 3 2 1 4812 20 16 tc = 2 5 c pulse test i c = 37 a 75 a 5 4 3 2 1 4812 20 16 i c = 37 a 75 a tc = 150 c pulse test 30 20 10 25 15 5 0 1100 10 1000 tj = 125c, tc = 90c v ce = 400 v, v ge = 15 v rg = 5 , duty = 50% 0 collector current wave (square wave)
RJH60D5BDPQ-E0 preliminary r07ds0794ej0300 rev.3.00 page 5 of 9 may 23, 2013 100 1000 10 110 100 1 10 0.1 100 1000 10 switching characteristics (typical) (3) gate registance rg ( ) (inductive load) switching characteristics (typical) (4) gate registance rg ( ) (inductive load) eoff eon v cc = 300 v, v ge = 15 v i c = 37 a, tc = 150 c swithing energy losses e (mj) switching times t (ns) 110 100 0.01 1 0.1 100 10 v cc = 300 v, v ge = 15 v rg = 5 , tc = 150 c swithing energy losses e (mj) 1 10 100 1 10 100 collector current i c (a) (inductive load) eoff eon switching characteristics (typical) (1) switching characteristics (typical) (2) collector current i c (a) (inductive load) switching times t (ns) v cc = 300 v, v ge = 15 v rg = 5 , tc = 150 c t d(off) t d(on) t f t r v cc = 300 v, v ge = 15 v i c = 37 a, tc = 25 c t d(off) t r t f t d(on) 10 100 1000 50 25 150 75 125 100 switching characteristics (typical) (5) t d(on) case temperature tc (c) (inductive load) switching times t (ns) v cc = 300 v, v ge = 15 v i c = 37 a, rg = 5 t f t d(off) t r 0.1 1 10 50 25 150 75 125 100 case temperature tc (c) (inductive load) switching characteristics (typical) (6) eoff eon swithing energy losses e (mj) v cc = 300 v, v ge = 15 v i c = 37 a, rg = 5
RJH60D5BDPQ-E0 preliminary r07ds0794ej0300 rev.3.00 page 6 of 9 may 23, 2013 diode current slope di f /dt (a/ s) reverse recovery time t rr (ns) reverse recovery time vs. diode current slope (typical) 100 50 300 250 200 150 0 04080 200 120 160 04080 200 120 160 04080 200 120 160 0.2 0.1 0.5 0.4 0.3 v cc = 300 v i f = 30 a tc = 150 c 25 c diode current slope di f /dt (a/ s) reverse recovery current i rr (a) reverse recovery current vs. diode current slope (typical) diode current slope di f /dt (a/ s) reverse recovery charge q rr ( c) reverse recovery charge vs. diode current slope (typical) 0 v cc = 300 v i f = 30 a tc = 150 c 25 c 12 8 4 16 0 v cc = 300 v i f = 30 a tc = 150 c 25 c forward current i f (a) c-e diode forward voltage v cef (v) forward current vs. forward voltage (typical) 0 120 80 40 100 60 20 0123 4 tc = 150 c 25 c v ce = 0 v pulse test capacitance c (pf) 10 100 1000 10000 0 100 50 150 200 250 300 cies coes cres gate charge qg (nc) dynamic input characteristics (typical) typical capacitance vs. collector to emitter voltage 800 600 400 200 0 0 16 12 8 4 0 20 40 60 80 100 v ge v ce v ge = 0 v f = 1 mhz tc = 25 c collector to emitter voltage v ce (v) collector to emitter voltage v ce (v) gate to emitter voltage v ge (v) v cc = 300 v i c = 37 a tc = 25 c
RJH60D5BDPQ-E0 preliminary r07ds0794ej0300 rev.3.00 page 7 of 9 may 23, 2013 0.01 1 0.1 10 100 1 m 10 m 100 m 1 100 10 0.05 0.2 0.1 0.5 d = 1 tc = 25 c 0.01 0.02 1 shot pulse 0.01 1 0.1 10 100 1 m 10 m 100 m 1 100 10 p dm pw t d = pw t j ? c(t) = s (t) ? j ? c j ? c = 1.1 c/w, tc = 25 c 0.2 0.1 0.5 d = 1 tc = 25 c pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width (igbt) pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width (diode) p dm pw t d = pw t j ? c(t) = s (t) ? j ? c j ? c = 0.63 c/w, tc = 25 c 0.01 0.02 0.05 1 shot pulse
RJH60D5BDPQ-E0 preliminary r07ds0794ej0300 rev.3.00 page 8 of 9 may 23, 2013 switching time test circuit diode reverse recovery time test circuit waveform waveform diode clamp d.u.t d.u.t rg l v cc v cc t rr i rr di f /dt 0.9 i rr i f i f rg t d(off) t d(on) t f t r 90% 90% 90% 10% 10% 10% v ge i c 0.5 i rr l 0
RJH60D5BDPQ-E0 preliminary r07ds0794ej0300 rev.3.00 page 9 of 9 may 23, 2013 package dimension 15 . 9 4 0 . 19 5 .4 5 6 . 15 21 . 13 0 . 33 20 . 19 0 . 38 4. 5 max 3 . 60 0 . 1 2 . 10 1 . 27 0 . 13 5 .4 5 2 .4 1 0 . 71 0 . 1 5 . 02 0 . 19 un i t : mm ? 6 . 0g mass [t yp .] ? prss0003z e- a r ene sas code j eit a package code prev i ous code package n ame t o - 2 4 7 17 . 63 13 . 26 + 0 . 1 ? 0 . 2 ordering information orderable part no. quantity shipping container RJH60D5BDPQ-E0#t2 240 pcs box (tube)
notice 1. descriptions of circuits, software and other related information in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information incl uded herein. 3. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electronics products or technical information described in this document. no license, express, implied or otherwise, is granted hereby under any paten ts, copyrights or other intellectual property rights of renesas electronics or others. 4. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part . renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of renesas electronics product. 5. renesas electronics products are classified according to the following two quality grades: "standard" and "high quality". t he recommended applications for each renesas electronics product depends on the product's quality grade, as indicated below. "standard": computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "high quality": transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; an ti-crime systems; and safety equipment etc. renesas electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat t o human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). you mus t check the quality grade of each renesas electronics product before using it in a particular application. you may not use any renesas electronics product for any application for which it is not intended. renesas electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any renesas electronics product for which the product is not intended by renesas electronics. 6. you should use the renesas electronics products described in this document within the range specified by renesas electronics , especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. renesas e lectronics shall have no liability for malfunctions or damages arising out of the use of renesas electronics products beyond such specified ranges. 7. although renesas electronics endeavors to improve the quality and reliability of its products, semiconductor products have s pecific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. further, renesas electronics products are not subject to radiation resistance desig n. please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a renesas electronics produc t, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measu res. because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. please contact a renesas electronics sales office for details as to environmental matters such as the environmental compatib ility of each renesas electronics product. please use renesas electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, in cluding without limitation, the eu rohs directive. renesas electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. renesas electronics products and technology may not be used for or incorporated into any products or systems whose manufactu re, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. you should not use renesas electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. when exporting the renesas electronics products or technology described in this do cument, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. it is the responsibility of the buyer or distributor of renesas electronics products, who distributes, disposes of, or othe rwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, renesas electronics assumes no responsibility for any losses incurred by yo u or third parties as a result of unauthorized use of renesas electronics products. 11. this document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of renesa s electronics. 12. please contact a renesas electronics sales office if you have any questions regarding the information contained in this doc ument or renesas electronics products, or if you have any other inquiries. (note 1) "renesas electronics" as used in this document means renesas electronics corporation and also includes its majority-o wned subsidiaries. (note 2) "renesas electronics product(s)" means any product developed or manufactured by or for renesas electronics. htt p ://www.renesas.co m refer to "htt p ://www.renesas.com/" for the latest and detailed information . r e n esas el ec tr o ni cs am e ri ca in c . 2880 scott boulevard santa clara , ca 95050-2554 , u.s.a . tel: +1-408-588-6000, fax: +1-408-588-6130 renesas electronics canada limited 1101 nicholson road, newmarket, ontario l3y 9c3, canada tel: +1-905-898-5441, fax: +1-905-898-3220 renesas electronics europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k tel: +44-1628-651-700, fax: +44-1628-651-804 renesas electronics europe gmbh arcadiastrasse 10, 40472 dsseldorf, germany tel: +49-211-65030, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. 7th floor, quantum plaza, no.27 zhichunlu haidian district, beijing 100083, p.r.china tel: +86-10-8235-1155, fax: +86-10-8235-7679 renesas electronics (shanghai) co., ltd. unit 204, 205, azia center, no.1233 lujiazui ring rd., pudong district, shanghai 200120, china tel: +86-21-5877-1818, fax: +86-21-6887-7858 / -7898 renesas electronics hong kong limited unit 1601-1613, 16/f., tower 2, grand century place, 193 prince edward road west, mongkok, kowloon, hong kong tel: +852-2886-9318, fax: +852 2886-9022/9044 renesas electronics taiwan co., ltd. 13f, no. 363, fu shing north road, taipei, taiwan tel: +886-2-8175-9600, fax: +886 2-8175-9670 renesas electronics singapore pte. ltd. 80 bendemeer road, unit #06-02 hyflux innovation centre singapore 339949 tel: +65-6213-0200, fax: +65-6213-0300 renesas electronics mala y sia sdn.bhd. unit 906, block b, menara amcorp, amcorp trade centre, no. 18, jln persiaran barat, 46050 petalin g jaya, selan g or darul ehsan, malaysi a tel: +60-3-7955-9390 , fax: +60-3-7955-951 0 renesas electronics korea co. , ltd . 11f., samik lavied' or bld g ., 720-2 yeoksam-don g , kan g nam-ku, seoul 135-080, korea tel: +82-2-558-3737 , fax: +82-2-558-514 1 s ale s o ffi c e s ? 2013 renesas electronics corporation. all ri g hts reserved . colo p hon 2.2
|
